BC817UPN NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 5 3 6 2 • Low collector-emitter saturation voltage 1 • Two (galvanic) internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 B2 E2 Tape loading orientation 6 5 4 Top View Marking on SC74 package TR1 TR2 (for example W1s) 6 5 4 corresponds to pin 1 of device W1s 1 2 3 E1 B1 C2 12 3 Position in tape: pin 1 EHA07177 opposite of feed hole side Direction of Unreeling SC74_Tape Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 45 V CEO Collector-base voltage V 50 CBO Emitter-base voltage V 5 EBO Collector current I 500 mA C Peak collector current, t ≤ 10 ms I 1000 p CM Base current I 100 B Peak base current I 200 BM Total power dissipation- P 330 mW tot T ≤ 115 °C S Junction temperature T 150 °C j Storage temperature T -65 ... 150 stg 1 2011-09-15

BC817UPN Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) R ≤ 105 K/W thJS Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 45 - - V (BR)CEO I = 10 mA, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 µA, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 10 µA, I = 0 E C Collector-base cutoff current I µA CBO V = 25 V, I = 0 - - 0.1 CB E V = 25 V, I = 0 , T = 150 °C - - 50 CB E A Emitter-base cutoff current I - - 100 nA EBO V = 4 V, I = 0 EB C DC current gain2) h - FE I = 100 mA, V = 1 V 160 250 400 C CE I = 300 mA, V = 1 V 100 - - C CE Collector-emitter saturation voltage2) V - - 0.7 V CEsat I = 500 mA, I = 50 mA C B Base emitter saturation voltage2) V - - 1.2 BEsat I = 500 mA, I = 50 mA C B AC Characteristics Transition frequency f - 170 - MHz T I = 50 mA, V = 5 V, f = 100 MHz C CE Collector-base capacitance C - 6 - pF cb f = 1 MHz, V = 10 V BE Emitter-base capacitance C - 60 - eb V = 0.5 V, f = 1 MHz EB 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-09-15

BC817UPN DC current gain h = ƒ(I ) Collector-emitter saturation voltage FE C V = 1 V I = ƒ(V ), h = 10 CE C CEsat FE 10 3 103 BC 817/818 EHP00223 mA Ι C 150˚C 25˚C 102 -50˚C 5 E F h 10 2 101 5 105 °C 85 °C 65 °C 25 °C 100 -40 °C 5 10 1 10-1 10 -5 10 -4 10 -3 10 -2 10 -1 A 10 0 0 0.2 0.4 0.6 V 0.8 IC V CEsat Base-emitter saturation voltage Collector cutoff current I = ƒ(T ) CBO A I = ƒ(V ), h = 10 V = 25 V C BEsat FE CBO 103 BC 817/818 EHP00222 105 BC 817/818 EHP00221 mA nA Ι Ι C 150˚C CBO 25˚C 104 -50˚C 102 5 max 103 101 5 typ 102 100 101 5 10-1 100 0 1.0 2.0 3.0 V 4.0 0 50 100 ˚C 150 V T BEsat A 3 2011-09-15

BC817UPN Transition frequency fT = ƒ(IC) Collector-base capacitance Ccb = ƒ(VCB) VCE = parameter in V, f = 2 GHz Emitter-base capacitance Ceb = ƒ(VEB) 103 BC 817/818 EHP00218 65 pF MHz f T 5 55 50 B E C 45 /B C C 40 35 102 30 25 5 20 CEB 15 10 CCB 5 101 100 101 102 mA 103 00 2 4 6 8 10 12 14 16 V 20 Ι V /V C CB EB Total power dissipation P = ƒ(T ) Permissible Pulse Load R = ƒ(t ) tot S thJS p 10 3 400 K/W mW 300 10 2 S ot hJ Pt 250 Rt 200 10 1 D=0.5 0.2 150 0.1 0.05 100 10 0 0.02 0.01 0.005 50 0 00 20 40 60 80 100 120 °C 150 10 -11 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 T t S p 4 2011-09-15

BC817UPN Permissible Pulse Load P /P = ƒ(t ) totmax totDC p 10 3 C D D=0 Ptot 0.005 /x 0.01 ma 10 2 0.02 ot 0.05 Pt 0.1 0.2 0.5 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 t p 5 2011-09-15

Package SC74 BC817UPN Package Outline 2.9±0.2 B 1.1 MAX. (2.25) (0.35) 0.15-+00..016 6 5 4 ±0.1 ±0.1 X. X. ±0.1 5 5 A A 6 Pin 1 1 2 30.35+-00..015 0.2M B 6x 2. 0.2 10˚ M 0.1 MAX10˚ M. A1. marking 0.95 0.2M A 1.9 Foot Print 0.5 9 9 1. 2. 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking BCW66H Laser marking Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 8 7 2. Pin 1 3.15 1.15 marking 6 2011-09-15

BC817UPN Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-09-15

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: BC 817UPN E6327 BC 817UPN B6327 BC817UPNE6327HTSA1